Thermal Microsensor for Application in Radiometer
نویسندگان
چکیده
In this paper presents two microsensors structures compatible with microelectronic technologies that are analyzed for application in radiometers. The first structure is formed by one resistor that is made by doping a monocrystalline silicon substrate with boron. The second is a polysilicon resistor doped with phosphorous, over a silicon dioxide (SiO2). The analysis is made by mathematical modeling of these devices, numeric simulation and graphics to obtain the better thermal-electrical characteristic of microsensor material. We choose the best microsensor structure with the increase performance of the system and with time decrease of sensor thermal response in relation the conventional manufacture for application in incident solar radiation measurement.
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